High-K film apparatus and method
US10861954B2 · kind B2 · utility
0Cited by
7References
20Claims
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Key dates
| Filing date | Jan 7, 2019 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device may include: a high-k layer disposed on a substrate and over a channel region in the substrate. The high-k layer may include a high-k dielectric material having one or more impurities therein, and the one or more impurities may include at least one of C, Cl, or N. The one or more impurities may have a molecular concentration of less than about 50%. The device may further include a cap layer over the high-k layer over the channel region, the high-k layer separating the cap layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.