Near-infrared light sensors including 2-dimensional insulator
US10861996B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 26, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Dec 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/244
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.