Patent · US Active

Reset before write architecture and method

US10867665B1 · kind B1 · utility

2Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 14, 2018
Grant dateDec 15, 2020
Priority date
Expiry dateFeb 14, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/229
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An SRAM bit-cell with independent write and read ports and an architecture utilizing a feedback loop from the read port to the write port of half-selected bit-cells. This guarantees absolute data retention of all SRAM bit-cells not fully selected for write operation across a wide range of supply voltage spanning from the nominal voltage of a process to a sub-threshold range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.