Method of forming a structure on a substrate
US10867788B2 · kind B2 · utility
4Cited by
1,739References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to depositing a layer on a substrate in a reactor, by:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.