Fin field-effect transistor device and method of forming the same
US10867861B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | May 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin adjacent to the gate structure; and forming a source/drain region in the recess, the source/drain region including a first layer, a second layer, and a third layer, where forming the source/drain region includes performing a first epitaxy process under first process conditions to form the first layer in the recess, the first layer extending along surfaces of the fin exposed by the recess; performing a second epitaxy process under second process conditions to form the second layer over the first layer; and performing a third epitaxy process under third process conditions to form the third layer over the second layer, the third layer filling the recess, where the first processing conditions, the second process conditions and the third process conditions are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.