Inventor · Hsinchu, TW

Tzu-Ching Lin

25Patents
3h-index
20Co-inventors
59Inventor score

Filing activity: Dec 9, 2010 → Jul 19, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10453943B2 FETS and methods of forming FETS Electricity 10 Active
US10038095B2 V-shape recess profile for embedded source/drain epitaxy Electricity 8 Active
US9905641B2 Semiconductor device and manufacturing method thereof Electricity 4 Active
US10867861B2 Fin field-effect transistor device and method of forming the same Electricity 3 Active
US10510607B1 Semiconductor device convex source/drain region Electricity 2 Active
US8771558B2 Method of manufacturing anti-counterfeit ink and anti-counterfeit tag and method of manufacturing the same Performing Operations; Transporting 2 Active
US10950730B2 Merged source/drain features Electricity 2 Active
US11004725B2 Method of forming a FinFET device with gaps in the source/drain region Electricity 1 Active
US11205713B2 FinFET having a non-faceted top surface portion for a source/drain region Electricity 1 Active
US11355641B2 Merged source/drain features Electricity 1 Active
US11823949B2 FinFet with source/drain regions comprising an insulator layer Electricity 1 Active
US10468482B2 Semiconductor device and manufacturing method thereof Electricity 1 Active
US12243784B2 Silicon phosphide semiconductor device Electricity 0 Active
US11121255B2 V-shape recess profile for embedded source/drain epitaxy Electricity 0 Active
US11961912B2 Merged source/drain features Electricity 0 Active
US11069578B2 Method of manufacturing a semiconductor device Electricity 0 Active
US10763366B2 V-shape recess profile for embedded source/drain epitaxy Electricity 0 Active
US12402344B2 FETS and methods of forming FETS Electricity 0 Active
US11004745B2 Semiconductor device convex source/drain region Electricity 0 Active
US10991630B2 Semiconductor device and method Electricity 0 Active
US11749567B2 Silicon phosphide semiconductor device Electricity 0 Active
US11600715B2 FETs and methods of forming FETs Electricity 0 Active
US10651309B2 V-shape recess profile for embedded source/drain epitaxy Electricity 0 Active
US10991795B2 Semiconductor device and manufacturing method thereof Electricity 0 Active
US11127637B2 Semiconductor device convex source/drain region Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.