Conductive structures in semiconductor devices
US10867906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2018 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Jun 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.