Dummy fill scheme for use with passive devices
US10867912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Jan 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures that include a passive device, such as a metal-based resistor, and methods of forming a structure that includes a passive device. The structure includes a semiconductor substrate, an interconnect structure including a passive device, and a dummy fill region arranged between the passive device and the semiconductor substrate. The dummy fill region includes a plurality of shallow trench isolation regions in the semiconductor substrate, a plurality of semiconductor fins, a plurality of source/drain regions in the plurality of semiconductor fins, and a plurality of contacts arranged over the plurality of shallow trench isolation regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.