Phase change memory device with crystallization template and method of making the same
US10868245B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2019 |
| Grant date | Dec 15, 2020 |
| Priority date | — |
| Expiry date | Jun 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.