Patent · US Active

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer

US10868246B2 · kind B2 · utility

9Cited by

1References

23Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Elijah V. Karpov · Portland, US
Roza Kotlyar · Portland, US
Prashant Majhi · San Jose, US
Jeffery D. Bielefeld · Forest Grove, US

Key dates

Filing date	Sep 30, 2016
Grant date	Dec 15, 2020
Priority date	—
Expiry date	Sep 30, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayers are described. In an example, a conductive bridge random access memory (CBRAM) device includes a conductive interconnect disposed in an inter-layer dielectric (ILD) layer disposed above a substrate. The CBRAM device also includes a CBRAM element disposed on the conductive interconnect. The CBRAM element includes an active electrode layer disposed on the conductive interconnect, and a resistance switching layer disposed on the active electrode layer. The resistance switching layer includes a first electrolyte material layer disposed on a second electrolyte material layer, the second electrolyte material layer disposed on the active electrode layer and having a thermal conductivity lower than a thermal conductivity of the first electrolyte material layer. A passive electrode layer is disposed on the first electrolyte material of the resistance switching layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.