Stressed decoupled micro-electro-mechanical system sensor

US10870575B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Horst Theuss · Wenzenbach, DE
• Bernhard Knott · Dresden, DE
• Thoralf Kautzsch · Dresden, DE
• Mirko Vogt · Dresden, DE
• Maik Stegemann · Freital, DE
• Andre Roeth · Dresden, DE
• Marco Haubold · Dresden, DE
• Heiko Froehlich · Radebeul, DE
• Wolfram Langheinrich · Dresden, DE
• Steffen Bieselt · Wehlen, DE

Key dates

• Filing date: Jun 29, 2018
• Grant date: Dec 22, 2020
• Expiry date: Dec 6, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1815
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.