Treatments to enhance material structures

US10872763B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Chu · Wilmington, US
• Steven C. H. Hung · Sunnyvale, US
• Malcolm J. Bevan · Dallas, US
• Charles Chu · Santa Clara, US
• Tatsuya Sato · Cupertino, US
• Shih Chung Chen · Hsinchu, TW
• Patricia M. Liu · Saratoga, US
• Johanes F. Swenberg · Los Gatos, US

Key dates

• Filing date: May 3, 2019
• Grant date: Dec 22, 2020
• Expiry date: May 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02123
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.