Selective layer formation using deposition and removing

US10872765B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Eva Tois · Helsinki, FI
• Viljami Pore · Helsinki, FI

Key dates

• Filing date: Apr 30, 2019
• Grant date: Dec 22, 2020
• Expiry date: Apr 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.