Permanent wafer bonding using metal alloy preform discs
US10873002B2 · kind B2 · utility
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23References
15Claims
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Assignee
Inventor
Key dates
| Filing date | Oct 20, 2006 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Aug 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/858
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor devices at the wafer level, and devices fabricated using the method, are described. Wafer-level bonding using a relatively thick layer of electrically conducting bond medium was used to achieve void-free permanent wafer level bonding. The bond medium can be introduced to the pre-bonded wafers by deposition or as a preform. The invention provides a low cost, simple and reliable wafer bonding technology which can be used in a variety of device fabrication processes, including flip chip packaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.