High density and fine pitch interconnect structures in an electric test apparatus
US10877068B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical-test apparatus is provided, which includes a MEMS array. In an example, the MEMS array comprises a plurality of tester interconnect structures cantilevered from first terminals on a first side of a substrate. The tester interconnect structures may have a first diameter. In an example, the MEMS array comprises a plurality of through-substrate vias that extend through the substrate, the vias having a second diameter larger than the first diameter. In an example, individual ones of the vias electrically couple individual ones of the tester interconnect structures to corresponding ones of second terminals on a second side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.