Semiconductor photonic devices using phase change materials

US10877352B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• John Heck · Berkeley, US
• Harel Frish · Kiryat Gat, IL
• Derchang Kau · Cupertino, US
• Charles H. Dennison · San Jose, US
• Haisheng Rong · Pleasanton, US
• Jeffrey Driscoll · San Jose, US
• Jonathan K. Doylend · معلمی نژاد, US
• George A. Ghiurcan · Corrales, US
• Michael Favaro · Edgewood, US

Key dates

• Filing date: Jul 19, 2019
• Grant date: Dec 29, 2020
• Expiry date: Jul 19, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2201/12
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.