Low cell voltage (LCV) memory write assist
US10878855B1 · kind B1 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A charge sharing type lower-cell-voltage (LCV) write assist takes advantage of unused metal layers on top of a memory array to implement capacitance without incurring area costs. Only one-time fixed amount expenses of charge are needed for a given LCV level during the charge sharing phase of each write operation. Metal wires parallel to the bit cell power wires have good capacitance matching for charge sharing among all memory density configurations, thus benefitting memory compiler design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.