Inventor · Taichung, TW

Chiting Cheng

74Patents
8h-index
45Co-inventors
74Inventor score

Filing activity: Jan 20, 2011 → Apr 22, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8630132B2 SRAM read and write assist apparatus Physics 179 Active
US9070432B2 Negative bitline boost scheme for SRAM write-assist Physics 22 Active
US9437281B2 Negative bitline boost scheme for SRAM write-assist Physics 19 Active
US9324413B2 Write assist circuit, memory device and method Physics 13 Active
US9064550B2 Method and apparatus for word line suppression Physics 12 Active
US8848461B2 Memory cell having flexible read/write assist and method of using Physics 10 Active
US8724420B2 SRAM write assist apparatus Physics 8 Active
US9305635B2 High density memory structure Physics 8 Active
US8923078B2 Voltage divider control circuit Electricity 8 Active
US9824729B2 Memory macro and method of operating the same Physics 8 Active
US8675439B2 Bit line voltage bias for low power memory design Physics 7 Active
US8437166B1 Word line driver cell layout for SRAM and other semiconductor devices Physics 7 Active
US10503421B2 Configurable memory storage system Electricity 5 Active
US10340897B2 Clock generating circuit and method of operating the same Physics 4 Active
US9997219B2 Memory macro and method of operating the same Physics 4 Active
US8437215B2 Memory with word-line segment access Physics 3 Active
US10319421B2 Memory macro and method of operating the same Physics 3 Active
US11199866B2 Voltage regulator with power rail tracking Electricity 3 Active
US10559333B2 Memory macro and method of operating the same Physics 2 Active
US10553275B2 Device having write assist circuit including memory-adapted transistors and method for making the same Electricity 2 Active
US11579648B2 Voltage regulator with power rail tracking Electricity 2 Active
US9583181B1 SRAM device capable of working in multiple low voltages without loss of performance Physics 2 Active
US10281502B2 Maximum voltage selection circuit Physics 2 Active
US10949100B2 Configurable memory storage system Electricity 2 Active
US10878855B1 Low cell voltage (LCV) memory write assist Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.