Inventor · Hsinchu, TW

Wei-jer Hsieh

24Patents
3h-index
23Co-inventors
59Inventor score

Filing activity: Jun 9, 2011 → Jul 16, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9070432B2 Negative bitline boost scheme for SRAM write-assist Physics 22 Active
US9437281B2 Negative bitline boost scheme for SRAM write-assist Physics 19 Active
US9208857B2 SRAM multiplexing apparatus Physics 3 Active
US10281502B2 Maximum voltage selection circuit Physics 2 Active
US10878855B1 Low cell voltage (LCV) memory write assist Electricity 2 Active
US8750053B2 SRAM multiplexing apparatus Physics 1 Active
US12112796B2 Memory circuit and word line driver Physics 1 Active
US11913980B2 Power detection circuit Electricity 1 Active
US11598794B2 Power detection circuit Electricity 1 Active
US11087833B2 Power management circuit in memory device Physics 1 Active
US12119040B2 Memory power control by enable circuit Physics 0 Active
US11915746B2 Memory device with word line pulse recovery Physics 0 Active
US11727972B2 SRAM with tracking circuitry for reducing active power Physics 0 Active
US12298331B2 Power detection circuit Electricity 0 Active
US12431191B2 Memory circuit and word line driver Physics 0 Active
US9025356B2 Fly-over conductor segments in integrated circuits with successive load devices along a signal path Physics 0 Active
US9076553B2 SPSRAM wrapper Physics 0 Active
US12211587B2 SRAM with tracking circuitry for reducing active power Physics 0 Active
US11373702B2 Boost schemes for write assist Physics 0 Active
US10263621B2 Level shifter with improved voltage difference Electricity 0 Active
US11355183B2 Memory device with word line pulse recovery Physics 0 Active
US9324453B2 Memory unit and method of testing the same Physics 0 Active
US12380945B2 Memory device with word line pulse recovery Physics 0 Active
US12125525B2 Memory device and method of operating the same Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.