Method for modifying the strain state of a block of a semiconducting material
US10879083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Feb 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the crystalline structure of an upper region of the block, which is in contact with the lower region; b) performing at least one creep annealing of the block with a suitable duration and temperature so that creep occurs in the lower region and without recrystallizing the material of this lower region; and c) performing at least one recrystallization annealing of the lower region of the block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.