Vertically oriented metal silicide containing e-fuse device
US10879171B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Sep 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative integrated circuit product disclosed herein includes a vertically oriented semiconductor (VOS) structure positioned above a semiconductor substrate, a conductive silicide vertically oriented e-fuse positioned along at least a portion of a vertical height of the VOS structure wherein the conductive silicide vertically oriented e-fuse comprises a metal silicide material that extends through at least a portion of an entire lateral width of the VOS structure, and a conductive metal silicide region in the semiconductor substrate that is conductively coupled to the conductive silicide vertically oriented e-fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.