Method for forming semiconductor device structure with conductive line
US10879186B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2020 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Sep 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a first trench, and the first trench has a first inner wall and a bottom surface. The method includes forming an anti-bombardment layer over a first top surface of the first mask layer. The method includes forming a second mask layer over the first inner wall of the first trench. The method includes removing the first portion, the first mask layer, the anti-bombardment layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.