Method for substrate moisture NCF voiding elimination
US10879195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/0652
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, semiconductor device assembly, and method of forming a semiconductor device assembly that includes moisture impermeable layer. The assembly includes a first substrate and a second substrate electrically connected to a surface of the first substrate. The assembly includes a layer between the two substrates with the moisture impermeable layer between the layer and the surface of the first substrate. The layer may be non-conductive film, die attach film, capillary underfill, or the like. A portion of the surface of the first substrate may include a solder mask between the moisture impermeable layer and the first substrate. The moisture impermeable layer prevents, or at least inhibits, moisture within the first substrate from potentially creating voids in the layer. The moisture impermeably layer may be a polyimide, a polyimide-like material, an epoxy, an epoxy-acrylate, parylene, vinyltriethoxysilane, or combination thereof. The moisture impermeable layer may have a high electrical resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.