Image sensor
US10879305B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jan 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a semiconductor substrate, a gate dielectric layer over the semiconductor substrate, a gate electrode over the gate dielectric layer, and a protection oxide film in contact with a top surface of the gate electrode. A top surface of the protection oxide film is free from contact with a hard mask comprising nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.