Memory device and memory unit
US10879312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
Abstract
There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a second electrode in order, in which the memory layer includes an ion source layer containing one or more transition metal elements selected from group 4, group 5, and group 6 in periodic table, one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or both of boron (B) and carbon (C), and a resistance change layer having resistance that is varied by voltage application to the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.