Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application
US10879454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2018 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Nov 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element for using in magnetic random access memory. The magnetic memory element includes a novel exchange coupling layer for use in an antiferromagnetic structure for magnetically pinning a magnetic reference layer of the memory element. The exchange coupling layer is located between a first magnetic layer (reference layer) and a second magnetic layer (keeper layer). The exchange coupling layer includes a layer of Ru located between first and second layers of Ir. The Ir layers can be in contact with each of the first and second magnetic layers to provide an interfacial magnetic anisotropy, as well as providing RKKY exchange field. The Ru layer, provides an increased RKKY exchange field as a result of the high RKKY exchange coupling of Ru.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.