Method for producing III-N templates and the reprocessing thereof and III-N template
US10883191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | May 30, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation εxx: (i) at room temperature the εxx value lies in the range of <0; and (ii) at growth temperature the εxx value lies in the range of εxx≤0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.