Lithographic method
US10884339B2 · kind B2 · utility
2Cited by
26References
27Claims
0Family size
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Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jun 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2007/041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.