Method of performing programming operation and related memory device
US10885990B1 · kind B1 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Dec 26, 2019 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Dec 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of performing a programming operation to a three dimensional (3D) NAND memory device is disclosed. The method makes residual electrons trapped in storage regions of middle dummy memory cells of the unselected string of the 3D NAND memory device to be removed during the pre-charging phase, so as to reduce program disturb to the selected string which neighbors the unselected string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.