Inventor · 红钢城街道, CN

Yali Song

33Patents
3h-index
26Co-inventors
55Inventor score

Filing activity: Mar 27, 2019 → Nov 13, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10950623B2 3D NAND memory device and method of forming the same Electricity 8 Active
US10998049B1 Method of programming memory device and related memory device Physics 4 Active
US10991438B1 Method and memory used for reducing program disturbance by adjusting voltage of dummy word line Electricity 4 Active
US10957408B1 Non-volatile memory device and control method Physics 3 Active
US10892023B2 Three-dimensional memory device programming with reduced disturbance Electricity 2 Active
US11062782B2 Three-dimensional memory device programming with reduced disturbance Electricity 2 Active
US10957409B1 Method of performing programming operation and related memory device Physics 2 Active
US11430811B2 3D NAND memory device with select gate cut Electricity 1 Active
US10885990B1 Method of performing programming operation and related memory device Physics 1 Active
US11710529B2 Three-dimensional memory device programming with reduced disturbance Physics 1 Active
US10943665B1 Method of programming and verifying memory device and related memory device Physics 1 Active
US11404441B2 3D NAND memory device and method of forming the same Electricity 1 Active
US11276467B2 Method of programming memory device and related memory device having a channel-stacked structure Physics 1 Active
US11721403B2 Method of programming and verifying memory device and related memory device Physics 0 Active
US11825656B2 3D NAND memory device and method of forming the same Electricity 0 Active
US11257545B2 Method of programming memory device and related memory device Physics 0 Active
US11875862B2 Memory including a plurality of portions and used for reducing program disturbance and program method thereof Physics 0 Active
US11195590B2 Memory including a plurality of portions and used for reducing program disturbance and program method thereof Physics 0 Active
US11864379B2 Three-dimensional memory and control method thereof Physics 0 Active
US12165716B2 Method of performing programming operation and related memory device Physics 0 Active
US11423995B2 Three-dimensional memory device programming with reduced disturbance Physics 0 Active
US11568941B2 Memory including a plurality of portions and used for reducing program disturbance and program method thereof Physics 0 Active
US12354668B2 Programming method for semiconductor device and semiconductor device Physics 0 Active
US11626170B2 Method and memory used for reducing program disturbance by adjusting voltage of dummy word line Electricity 0 Active
US11594288B2 Memory including a plurality of portions and used for reducing program disturbance and program method thereof Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.