Device structure for forming semiconductor device having angled contacts

US10886279B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Sony Varghese · Attleboro, US
• Anthony Renau · West Newbury, US
• Morgan Evans · Attleboro, US
• John Hautala · Beverly, US
• Joe Olson · Beverly, US

Key dates

• Filing date: May 15, 2020
• Grant date: Jan 5, 2021
• Expiry date: May 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/315

Abstract

A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.