Memory cell with independently-sized elements
US10886332B2 · kind B2 · utility
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Key dates
| Filing date | Jan 7, 2020 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.