Vertical memory cell with mechanical structural reinforcement
US10886364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Mar 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reinforced vertical-NAND structure is provided. The reinforced vertical-NAND structure includes a first set of interleaved oxide and nitride layers formed into first and second vertical structures. The first vertical structure rises from a first section of a substrate and the second vertical structure rises from a second section of the substrate. The reinforced vertical-NAND structure also includes a reinforcing layer and a second set of interleaved oxide and nitride layers formed into third and fourth vertical structures. The reinforcing layer includes sheets, which are distinct and laid across respective tops of the first and second vertical structures, and bridges connecting the sheets. The third vertical structure rises from the sheet corresponding to the first vertical structure and the fourth vertical structure rises from the sheet corresponding to the second vertical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.