Semiconductor structure for improving thermal stability and Schottky behavior
US10886392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.