Method of manufacturing an optoelectronic device by transferring a conversion structure onto an emission structure
US10886429B2 · kind B2 · utility
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11References
15Claims
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Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Jul 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (λ1),
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.