Patent · US Active

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

US10886909B2 · kind B2 · utility

1Cited by

4References

28Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roman Baburske · Otterfing, DE
Johannes Georg Laven · Taufkirchen, DE
Thomas Basler · Riemerling, DE

Key dates

Filing date	Jun 13, 2017
Grant date	Jan 5, 2021
Priority date	—
Expiry date	Mar 10, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.