Patent · US Active

Bit-line repeater insertion architecture

US10891992B1 · kind B1 · utility

0Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 14, 2018
Grant dateJan 12, 2021
Priority date
Expiry dateFeb 14, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/418
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An SRAM architecture to optimize the performance of the SRAM. The local bit-lines are activated one at a time with control signals from a decoder. The global bit-lines are broken with repeaters to optimize performance. This guarantees optimal performance for the SRAM array across a wide range of supply voltages spanning from the nominal voltage of a process to a sub-threshold range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.