Word line structure and method of manufacturing the same
US10892265B2 · kind B2 · utility
0Cited by
4References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a word line structure including a substrate, a stack structure, and a metal silicide structure. The stack structure is disposed on the substrate. The metal silicide structure is disposed on the stack structure. The metal silicide structure includes a first metal element, a second metal element, and a silicon element. The first metal element is different from the second metal element, and concentrations of the first metal element and the second metal element gradually decrease along a direction from a top surface of the metal silicide structure to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.