Inter-deck plug in three-dimensional memory device and method for forming the same

US10892280B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Qianbin Xu · 红钢城街道, CN
• Haohao Yang · 红钢城街道, CN
• Enbo Wang · Hubei, CN
• Yong Zhang · Tangxia, CN
• Jialan He · 红钢城街道, CN

Key dates

• Filing date: Jun 29, 2020
• Grant date: Jan 12, 2021
• Expiry date: Jun 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Embodiments of 3D memory devices having an inter-deck plug and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a first memory deck including interleaved conductor and dielectric layers above the substrate, a second memory deck including interleaved conductor and dielectric layers above the first memory deck, and a first and a second channel structure each extending vertically through the first or second memory deck. The first channel structure includes a first memory film and semiconductor channel along a sidewall of the first channel structure, and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel. A lateral surface of the inter-deck plug is smooth. The second channel structure includes a second memory film and semiconductor channel along a sidewall of the second channel structure. The second semiconductor channel is in contact with the inter-deck plug.