Structured bottom electrode for MTJ containing devices
US10892403B2 · kind B2 · utility
2Cited by
8References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A bottom electrode structure for a magnetic tunnel junction (MTJ) containing device is provided. The bottom electrode structure includes a mesa portion that is laterally surrounded by a recessed region. The recessed region of the bottom electrode structure is laterally adjacent to a dielectric material, and a MTJ pillar is located on the mesa portion of the bottom electrode structure. Such a configuration shields the recessed region from impinging ions thus preventing deposition of resputtered conductive metal particles from the bottom electrode onto the MTJ pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.