Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same
US10894799B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
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Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.