Patent · US Active

Silicon residue removal in nanosheet transistors

US10896816B2 · kind B2 · utility

2Cited by

10References

20Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Zhenxing Bi · Dunn Loring, US
Thamarai S. Devarajan · Niskayuna, US
Nicolas Loubet · Guilderland, US
Binglin Miao · Loudonville, US
Muthumanickam Sankarapandian · Niskayuna, US
Charan V. Surisetty · Clifton Park, US
Chun Wing Yeung · Niskayuna, US
Jingyun Zhang · Albany, US

Key dates

Filing date	Sep 26, 2017
Grant date	Jan 19, 2021
Priority date	—
Expiry date	Sep 26, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.