Patent · US Active

Limited dose atomic layer processes for localizing coatings on non-planar surfaces

US10896823B2 · kind B2 · utility

2Cited by

7References

5Claims

0Family size

Inventors

Thomas E. Seidel · Sunnyvale, US
Michael I. Current · Mountain View, US

Key dates

Filing date	Oct 28, 2019
Grant date	Jan 19, 2021
Priority date	—
Expiry date	Oct 28, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG01T3/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Processes for localized film deposition on semiconductor device surfaces having non-planar features. The processes use combinations of Limited-Dose Atomic Layer Etch, Limited Dose Atomic Layer Deposition, and Atomic Layer Deposition to provide localized coatings only near or on the bottom, or only near the center, or only near or on the top and bottom of trench and Fin features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.