Michael I. Current
18Patents
7h-index
13Co-inventors
63Inventor score
Filing activity: Sep 28, 1990 → Apr 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5047648A | Method and apparatus for detecting particles in ion implantation machines | Electricity | 32 | Expired |
| US9704835B2 | Three dimensional integrated circuit | Electricity | 28 | Active |
| US5155369A | Multiple angle implants for shallow implant | Electricity | 24 | Expired |
| US7019513B1 | Non-contact method and apparatus for measurement of sheet resistance and leakage current of p-n junctions | Physics | 16 | Expired |
| US10049915B2 | Three dimensional integrated circuit | Electricity | 15 | Active |
| US10573627B2 | Three dimensional integrated circuit | Electricity | 11 | Active |
| US7414409B1 | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers | Physics | 11 | Active |
| US11410984B1 | Three dimensional integrated circuit with lateral connection layer | Electricity | 3 | Active |
| US7642772B1 | Non-contact method and apparatus for measurement of leakage current of p-n junctions in IC product wafers | Physics | 3 | Active |
| US8187377B2 | Non-contact etch annealing of strained layers | Electricity | 3 | Active |
| US10896823B2 | Limited dose atomic layer processes for localizing coatings on non-planar surfaces | Physics | 2 | Active |
| US10804252B2 | Three dimensional integrated circuit | Electricity | 2 | Active |
| US11901351B2 | Three dimensional integrated circuit with lateral connection layer | Electricity | 0 | Active |
| US10923459B2 | Three dimensional integrated circuit | Electricity | 0 | Active |
| USD645768S1 | Junction photovoltage probe face | General | 0 | Expired |
| US10923359B2 | Limited dose and angle directed beam assisted ALE and ALD processes for localized coatings on non-planar surfaces | Electricity | 0 | Active |
| US12176326B2 | Method of forming semiconductor device using high stress cleave plane | Electricity | 0 | Active |
| US11626392B2 | Method of forming semiconductor device using range compensating material | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.