Filling empty structures with deposition under high-energy SEM for uniform DE layering
US10903044B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2020 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Feb 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of evaluating a region of a sample that includes an array of holes separated by solid portions. The method includes positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB); injecting a deposition gas onto the sample; scanning, with a first charged particle beam, a portion of the sample that includes a plurality of holes in the array of holes to locally deposit material within the plurality of holes in the scanned portion from the deposition gas; and milling, with the FIB column, the portion of the sample that includes the plurality of holes in which the material was locally deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.