Method for forming complementary doped semiconductor regions in a semiconductor body

US10903079B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Rolf Weis · Dresden, DE
• Thomas R. Gross · Sinzing, DE
• Hermann Gruber · Leverkusen, DE
• Franz Hirler · Isen, DE
• Andreas Meiser · Unterhaching, DE
• Markus Rochel · Dresden, DE
• Till Schloesser · Dresden, DE
• Detlef Weber · Grünberg, DE

Key dates

• Filing date: Mar 12, 2019
• Grant date: Jan 26, 2021
• Expiry date: Apr 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.