Semiconductor device and method for fabricating the same
US10903224B2 · kind B2 · utility
0Cited by
6References
5Claims
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Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Nov 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, an isolation structure; a first gate dielectric layer and a first gate electrode. The isolation structure is formed in the semiconductor substrate to divide the semiconductor substrate at least into a first active region and a second active region. The first gate dielectric layer is disposed on the first active region, and has a plane top surface contacting to a sidewall of the isolation structure and forming an acute angle therewith. The first gate electrode stacked on the plane top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.