Doping control of metal nitride films
US10910263B2 · kind B2 · utility
0Cited by
7References
12Claims
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Key dates
| Filing date | Aug 20, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.