STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method
US10910276B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Oct 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure, an STI structure and a related method are disclosed. The structure may include an active region extending from a substrate; a gate extending over the active region; and a source/drain region in the active region, and an STI structure. The STI structure includes a liner and a fill layer on the liner along the opposed longitudinal sides of a lower portion of the active region, and the fill layer along the opposed ends of the active region. The liner may include a tensile stress-inducing liner that imparts a transverse-to-length tensile stress in at least a lower portion of the active region but not lengthwise. The liner can be applied in an n-FET region and/or a p-FET region to improve performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.