Patent · US Active

Nanotube structure based metal damascene process

US10910309B2 · kind B2 · utility

0Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 1, 2017
Grant dateFeb 2, 2021
Priority date
Expiry dateJul 8, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.